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power: bq2415x_charger: Fix memory leak on DTS parsing error

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Memory allocated for 'name' was leaking if required binding properties
were not present.

The memory for 'name' was allocated early at probe with kasprintf(). It
was freed in error paths executed before and after parsing DTS but not
in that error path.

Fix the error path for parsing device tree properties.

Signed-off-by: Krzysztof Kozlowski <k.kozlowski@samsung.com>
Fixes: faffd234cf ("bq2415x_charger: Add DT support")
Cc: <stable@vger.kernel.org>
Signed-off-by: Sebastian Reichel <sre@kernel.org>
This commit is contained in:
Krzysztof Kozlowski
2014-10-28 03:30:18 +01:00
committed by Sebastian Reichel
parent 0eaf437aa1
commit 21e863b233
1 changed files with 6 additions and 6 deletions
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drivers/power/bq2415x_charger.c
+6 -6
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@@ -1609,27 +1609,27 @@ static int bq2415x_probe(struct i2c_client *client,
ret = of_property_read_u32(np, "ti,current-limit",
&bq->init_data.current_limit);
if (ret)
return ret;
goto error_2;
ret = of_property_read_u32(np, "ti,weak-battery-voltage",
&bq->init_data.weak_battery_voltage);
if (ret)
return ret;
goto error_2;
ret = of_property_read_u32(np, "ti,battery-regulation-voltage",
&bq->init_data.battery_regulation_voltage);
if (ret)
return ret;
goto error_2;
ret = of_property_read_u32(np, "ti,charge-current",
&bq->init_data.charge_current);
if (ret)
return ret;
goto error_2;
ret = of_property_read_u32(np, "ti,termination-current",
&bq->init_data.termination_current);
if (ret)
return ret;
goto error_2;
ret = of_property_read_u32(np, "ti,resistor-sense",
&bq->init_data.resistor_sense);
if (ret)
return ret;
goto error_2;
} else {
memcpy(&bq->init_data, pdata, sizeof(bq->init_data));
}