Always keep valid data in reserved_size.
It did not cause problems, but the reservation code was unoptimal
when centralized summary was active or the size of the erase block
was very small.
Signed-off-by: Ferenc Havasi <havasi@inf.u-szeged.hu>
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
The changes introduced allow to suspend/resume NAND flash.
A new state (FL_PM_SUSPENDED) is introduced, as well as
routines for mtd->suspend and mtd->resume to put the flash in
suspended state from software pov.
Signed-off-by: Vitaly Wool <vwool@ru.mvista.com>
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
Do the summary collection in the right place. If the device
was not writebuffered but had c->mtd->writev function
(e.g. blkmtd) the summary collector function was not called.
Signed-off-by: Ferenc Havasi <havasi@inf.u-szeged.hu>
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
- Intel chip driver has a reboot notifier so no need to reset the chip here.
- Don't play with chip selects (platform code should do this if necessary).
Signed-off-by: David Vrabel <dvrabel@arcom.com>
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
The goal of summary is to speed up the mount time. Erase block summary (EBS)
stores summary information at the end of every (closed) erase block. It is
no longer necessary to scan all nodes separetly (and read all pages of them)
just read this "small" summary, where every information is stored which is
needed at mount time.
This summary information is stored in a JFFS2_FEATURE_RWCOMPAT_DELETE. During
the mount process if there is no summary info the orignal scan process will
be executed. EBS works with NAND and NOR flashes, too.
There is a user space tool called sumtool to generate this summary
information for a JFFS2 image.
Signed-off-by: Ferenc Havasi <havasi@inf.u-szeged.hu>
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
- Update OMAP OneNAND mapping file using device driver model
- Remove board specific macro and values.
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
OneNAND is a new flash technology from Samsung with integrated SRAM
buffers and logic interface.
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
Remove support for virtual blocks, which are build by
concatenation of multiple physical erase blocks.
For more information please read the MTD mailing list thread
"[PATCH] remove support for virtual blocks"
Signed-off-by: Ferenc Havasi <havasi@inf.u-szeged.hu>
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
When data starts from the beginning of NAND page, 'len' must be zero, not
c->wbuf_page.
Thanks to Zoltan Sogor for reporting this problem.
Signed-off-by: Artem B. Bityutskiy <dedekind@infradead.org>
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
The bit mask used for oob size calculation was using 2 bits instead
of one. Fortunately the next bit has been 0 all the time.
Thanks to Nathan H. for pointing this out
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
Joern Engel
Ferenc Havasi
Vitaly Wool
Todd Poynor
Artem B. Bityutskiy
Kyungmin Park
David Vrabel
Thomas Gleixner