* git://git.infradead.org/mtd-2.6: (82 commits)
mtd: fix build error in m25p80.c
mtd: Remove redundant mutex from mtd_blkdevs.c
MTD: Fix wrong check register_blkdev return value
Revert "mtd: cleanup Kconfig dependencies"
mtd: cfi_cmdset_0002: make sector erase command variable
mtd: cfi_cmdset_0002: add CFI detection for SST 38VF640x chips
mtd: cfi_util: add support for switching SST 39VF640xB chips into QRY mode
mtd: cfi_cmdset_0001: use defined value of P_ID_INTEL_PERFORMANCE instead of hardcoded one
block2mtd: dubious assignment
P4080/mtd: Fix the freescale lbc issue with 36bit mode
P4080/eLBC: Make Freescale elbc interrupt common to elbc devices
mtd: phram: use KBUILD_MODNAME
mtd: OneNAND: S5PC110: Fix double call suspend & resume function
mtd: nand: fix MTD_MODE_RAW writes
jffs2: use kmemdup
mtd: sm_ftl: cosmetic, use bool when possible
mtd: r852: remove useless pci powerup/down from suspend/resume routines
mtd: blktrans: fix a race vs kthread_stop
mtd: blktrans: kill BKL
mtd: allow to unload the mtdtrans module if its block devices aren't open
...
Fix up trivial whitespace-introduced conflict in drivers/mtd/mtdchar.c
Some old SST chips use 0x50 as sector erase command, instead
of 0x30. Make this value variable to handle such chips.
Signed-off-by: Guillaume LECERF <glecerf@gmail.com>
Acked-by: Wolfram Sang <w.sang@pengutronix.de>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
- *var instead of * var
- proper multiline comment
- func(args) instead of func (args)
- 80 lines
So from
|total: 2 errors, 37 warnings, 654 lines checked
we got to one warning.
Signed-off-by: Sebastian Andrzej Siewior <bigeasy@linutronix.de>
Signed-off-by: Artem Bityutskiy <Artem.Bityutskiy@nokia.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
it will create an empty BBT table without considering vendor's BBT
information. Vendor's information may be unavailable if the NAND
controller has a different DATA & OOB layout or this information may be
allready purged.
Signed-off-by: Sebastian Andrzej Siewior <bigeasy@linutronix.de>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
The first (sixt) byte in the OOB area contains vendor's bad block
information. During identification of the NAND chip this information is
collected by scanning the complete chip.
The option NAND_USE_FLASH_BBT is used to store this information in a sector so
we don't have to scan the complete flash. Unfortunately the code stores
a marker in order to recognize the BBT in the OOB area. This will fail
if the OOB area is completely used for ECC.
This patch introduces the option NAND_USE_FLASH_BBT_NO_OOB which has to be
used with NAND_USE_FLASH_BBT. It will then store BBT on flash without
touching the OOB area. The BBT format on flash remains same except the
first page starts with the recognition pattern followed by the version byte.
This change was tested in nandsim and it looks good so far :)
Signed-off-by: Sebastian Andrzej Siewior <bigeasy@linutronix.de>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
Not all the NAND devices have all the information in additional
id bytes.
So add a hook in the nand_chip{} is a good method to calculate the
right value of oobsize, erasesize and so on.
Without the hook,you will get the wrong value, and you have to hack
in the ->scan_bbt() to change the wrong value which make the code
mess.
Signed-off-by: Huang Shijie <shijie8@gmail.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
mtd_is_master, mtd_add_partition and mtd_del_partition functions
are added to give the possibility of partition manipulation
by ioctl request.
The old partition add function is modified to fit the dynamic
allocation.
Signed-off-by: Roman Tereshonkov <roman.tereshonkov@nokia.com>
Signed-off-by: Artem Bityutskiy <Artem.Bityutskiy@nokia.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
This patch adds support for reading NAND device ONFI parameters and use
the ONFI informations to define its geometry. In case the device supports
ONFI, the onfi_version field in struct nand_chip contains the version (BCD)
and the onfi_params structure can be used by drivers to set up timings and
such. We currently only support ONFI 1.0 parameters.
Signed-off-by: Brian Norris <norris@broadcom.com>
Signed-off-by: Matthieu Castet <matthieu.castet@parrot.com>
Signed-off-by: Maxime Bizon <mbizon@freebox.fr>
Signed-off-by: Florian Fainelli <ffainelli@freebox.fr>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
An increase in NAND_MAX_OOBSIZE and NAND_MAX_PAGESIZE is necessary
in order to support many new chips. Among those:
Toshiba TC58TxG4S2FBAxx 8KB page, 576B OOB
Micron MT29F64G08CBAAA 8KB page, 448B OOB
Signed-off-by: Brian Norris <norris@broadcom.com>
Signed-off-by: Artem Bityutskiy <Artem.Bityutskiy@nokia.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
There were some improvements and additions necessary in the
comments explaining of the expansion of nand_ecclayout, the
introduction of nand_ecclayout_user, and the deprecation of the
ioctl ECCGETLAYOUT.
Also, I found a better placement for the macro MTD_MAX_ECCPOS_ENTRIES;
next to the definition of MTD_MAX_OOBFREE_ENTRIES in mtd-abi.h. The macro
is really only important for the ioctl code (found in drivers/mtd/mtdchar.c)
but since there are small edits being made to the user-space header, I
figured this is a better location.
Signed-off-by: Brian Norris <computersforpeace@gmail.com>
Signed-off-by: Artem Bityutskiy <Artem.Bityutskiy@nokia.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
struct nand_ecclayout is too small for many new chips; OOB regions can be as
large as 448 bytes and may increase more in the future. Thus, copying that
struct to user-space with the ECCGETLAYOUT ioctl is not a good idea; the ioctl
would have to be updated every time there's a change to the current largest
size.
Instead, the old nand_ecclayout is renamed to nand_ecclayout_user and a
new struct nand_ecclayout is created that can accomodate larger sizes and
expand without affecting the user-space. struct nand_ecclayout can still
be used in board drivers without modification -- at least for now.
A new function is provided to convert from the new to the old in order to
allow the deprecated ioctl to continue to work with truncated data. Perhaps
the ioctl, the conversion process, and the struct nand_ecclayout_user can be
removed altogether in the future.
Note: There are comments in nand/davinci_nand.c::nand_davinci_probe()
regarding this issue; this driver (and maybe others) can be updated to
account for extra space. All kernel drivers can use the expanded
nand_ecclayout as a drop-in replacement and ignore its benefits.
Signed-off-by: Brian Norris <computersforpeace@gmail.com>
Signed-off-by: Artem Bityutskiy <Artem.Bityutskiy@nokia.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
There are three reasons to add this support:
1. users probably know the interface type of their flashs, then probe
can be faster if they give the right type in platform data since wrong
types will not be detected.
2. sometimes, detecting can cause destory to system. For example, for
kernel XIP, detecting can cause NOR enter a mode instructions can not
be fetched right, which will make kernel crash.
3. For a new probe which is not listed in the rom_probe_types, if users
assign it in board files, physmap can still probe it.
Signed-off-by: Barry Song <21cnbao@gmail.com>
Signed-off-by: Mike Frysinger <vapier.adi@gmail.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
This patch prevent to schedule while atomic by changing the
flchip_shared spinlock into a mutex. This should be save since no atomic
path will use this lock.
It was suggested by Arnd Bergmann and Vasiliy Kulikov.
Signed-off-by: Stefani Seibold <stefani@seibold.net>
Signed-off-by: Artem Bityutskiy <Artem.Bityutskiy@nokia.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
Samsung SoCs use the own OneNAND controler and detect OneNAND chip at power on.
To use this feature, introduce the chip_probe function.
Also remove workaround for Samsung SoCs.
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
This is a revision to PATCH 2/2 that I sent. Link:
http://lists.infradead.org/pipermail/linux-mtd/2010-July/030911.html
Added new flag for scanning of both bytes 1 and 6 of the OOB for
a BB marker (instead of simply one or the other).
The "check_pattern" and "check_short_pattern" functions were updated
to include support for scanning the two different locations in the OOB.
In order to handle increases in variety of necessary scanning patterns,
I implemented dynamic memory allocation of nand_bbt_descr structs
in new function 'nand_create_default_bbt_descr()'. This replaces
some increasingly-unwieldy, statically-declared descriptors. It can
replace several more (e.g. "flashbased" structs). However, I do not
test the flashbased options personally.
How this was tested:
I referenced 30+ data sheets (covering 100+ parts), and I tested a
selection of 10 different chips to varying degrees. Particularly, I
tested the creation of bad-block descriptors and basic BB scanning on
three parts:
ST NAND04GW3B2D, 2K page
ST NAND128W3A, 512B page
Samsung K9F1G08U0A, 2K page
To test these, I wrote some fake bad block markers to the flash (in OOB
bytes 1, 6, and elsewhere) to see if the scanning routine would detect
them properly. However, this method was somewhat limited because the
driver I am using has some bugs in its OOB write functionality.
Signed-off-by: Brian Norris <norris@broadcom.com>
Signed-off-by: Artem Bityutskiy <Artem.Bityutskiy@nokia.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
NAND_BB_LAST_PAGE used to be in nand.h, but it pertained to bad block
management and so belongs next to NAND_BBT_SCAN2NDPAGE in bbm.h. Also,
its previous flag value (0x00000400) conflicted with NAND_BBT_SCANALLPAGES
so I changed its value to 0x00008000. All uses of the name were modified to
provide consistency with other "NAND_BBT_*" flags.
Signed-off-by: Brian Norris <norris@broadcom.com>
Signed-off-by: Artem Bityutskiy <Artem.Bityutskiy@nokia.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
This patchs adds a way for user space programs to find out whether a
flash sector is locked. An optional driver method in the mtd_info struct
provides the information.
Signed-off-by: Richard Cochran <richard.cochran@omicron.at>
Signed-off-by: Artem Bityutskiy <Artem.Bityutskiy@nokia.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
This is a slightly modified version of a patch submitted last year by
Reuben Dowle <reuben.dowle@navico.com>. His original comments follow:
This patch adds support for some MLC NAND flashes that place the BB
marker in the LAST page of the bad block rather than the FIRST page used
for SLC NAND and other types of MLC nand.
Lifted from Samsung datasheet for K9LG8G08U0A (1Gbyte MLC NAND):
"
Identifying Initial Invalid Block(s)
All device locations are erased(FFh) except locations where the initial
invalid block(s) information is written prior to shipping. The initial
invalid block(s) status is defined by the 1st byte in the spare area.
Samsung makes sure that the last page of every initial invalid block has
non-FFh data at the column address of 2,048.
...
"
As far as I can tell, this is the same for all Samsung MLC nand, and in
fact the samsung bsp for the processor used in our project (s3c6410)
actually contained a hack similar to this patch but less portable to
enable use of their NAND parts. I discovered this problem when trying to
use a Micron NAND which does not used this layout - I wish samsung would
put their stuff in main-line to avoid this type of problem.
Currently this patch causes all MLC nand with manufacturer codes from
Samsung and ST(Numonyx) to use this alternative location, since these
are the manufactures that I know of that use this layout.
Signed-off-by: Kevin Cernekee <cernekee@gmail.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
